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PDB2116M - N+P Dual Channel MOSFETs

PDB2116M Description

20V N+P Dual Channel MOSFETs PDB2116M General .
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.

PDB2116M Features

* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDB2116M
Manufacturer
Potens semiconductor
File Size
560.34 KB
Datasheet
PDB2116M-Potenssemiconductor.pdf
Description
N+P Dual Channel MOSFETs

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N +P Dual Channel MOSFETs Potens semiconductor
Potens semiconductor PDB2116M-like datasheet