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PDB2116M Datasheet - Potens semiconductor

PDB2116M, N+P Dual Channel MOSFETs

20V N+P Dual Channel MOSFETs PDB2116M General .
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.
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PDB2116M-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDB2116M

Manufacturer:

Potens semiconductor

File Size:

560.34 KB

Description:

N+P Dual Channel MOSFETs

Features

* Fast switching
* Green Device Available

PDB2116M Distributors

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