PDB2116M Datasheet - Potens semiconductor

PDB2116M N+P Dual Channel MOSFETs

These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand hi.

PDB2116M Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source V

PDB2116M Datasheet (560.34 KB)

PDB2116M Datasheet Preview — Preview of PDB2116M PDF

Datasheet Details

Part number:

PDB2116M

Manufacturer:

Potens semiconductor

File Size:

560.34 KB

Description:

N+p dual channel mosfets.

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PDB2116M N +P Dual Channel MOSFETs Potens semiconductor

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