PDB2116M - N+P Dual Channel MOSFETs
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40mī 90mī 3.8A -2.5A provide superior switching performance, and withstand hi
PDB2116M Features
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Networking
* Hand-held Instruments Absolute Maximum Ratings Tc=25â unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source V
