PDB2116M N+P Dual Channel MOSFETs

Potens semiconductor

Description

20V N+P Dual Channel MOSFETs PDB2116M General .
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: PDB2116M
Manufacturer: Potens semiconductor
File Size: 560.34 KB
Datasheet: PDB2116M-Potenssemiconductor.pdf
Description: N+P Dual Channel MOSFETs

Features

* Fast switching
* Green Device Available

PDB2116M Distributors

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PDB2116M N +P Dual Channel MOSFETs Potens semiconductor

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