PDB2116S Datasheet - Potens semiconductor

PDB2116S N+P Dual Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

PDB2116S Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications ˙ S1 G1 D2 D1 G2 S2 D1 G G1 G2 D2 App

* licNaotteiobonosk

* Load Switch

* Networking

* Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VG

PDB2116S Datasheet (435.94 KB)

PDB2116S Datasheet Preview — Preview of PDB2116S PDF

Datasheet Details

Part number:

PDB2116S

Manufacturer:

Potens semiconductor

File Size:

435.94 KB

Description:

N+p dual channel mosfet.

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PDB2116S N +P Dual Channel MOSFET Potens semiconductor

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