Part number:
PDB2116S
Manufacturer:
Potens semiconductor
File Size:
435.94 KB
Description:
N+p dual channel mosfet.
PDB2116S-Potenssemiconductor.pdf
Datasheet Details
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod
PDB2116S Features
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications ˙ S1 G1 D2 D1 G2 S2 D1 G G1 G2 D2 App
* licNaotteiobonosk
* Load Switch
* Networking
* Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VG
PDB2116S-Potenssemiconductor.pdf
Datasheet Details
PDB2116S
Potens semiconductor
435.94 KB
N+p dual channel mosfet.
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