PDB4854S Datasheet (Potens semiconductor)

PDB4854S, Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDB4854S Features

* 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1 Applications D2

* Networking

* Load Switch

* LED applications S2 Absolute Maximum Ratings Tc=2