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PDC3906X Datasheet - Potens semiconductor

PDC3906X N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC3906X Features

* 30V,80A, RDS(ON) =5.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDC3906X-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDC3906X

Manufacturer:

Potens semiconductor

File Size:

606.00 KB

Description:

N-channel mosfet.

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PDC3906X PDC3906X N-Channel MOSFET Potens semiconductor

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