Part number:
PDC3906X
Manufacturer:
Potens semiconductor
File Size:
606.00 KB
Description:
N-channel mosfet.
PDC3906X-Potenssemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC3906X Features
* 30V,80A, RDS(ON) =5.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID
PDC3906X-Potenssemiconductor.pdf
Datasheet Details
PDC3906X
Potens semiconductor
606.00 KB
N-channel mosfet.
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