PDC3906Z Datasheet - Potens semiconductor

PDC3906Z N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC3906Z Features

* 30V,60A, RDS(ON) =6mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID ID

PDC3906Z-Potenssemiconductor.pdf

PDC3906Z Datasheet Preview — Preview of PDC3906Z PDF

Datasheet Details

Part number:

PDC3906Z

Manufacturer:

Potens semiconductor

File Size:

751.12 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDC3906X N-Channel MOSFET (Potens semiconductor)

PDC3901X P-Channel MOSFETs (Potens semiconductor)

PDC3902X N-Channel MOSFET (Potens semiconductor)

PDC3903X P-Channel MOSFETs (Potens semiconductor)

PDC3903Z P-Channel MOSFET (Potens semiconductor)

PDC3904Z N-Channel MOSFET (Potens semiconductor)

PDC3905Z 30V P-Channel MOSFETs (Potens semiconductor)

PDC3907Z P-Channel MOSFET (Potens semiconductor)

TAGS

PDC3906Z PDC3906Z N-Channel MOSFETs Potens semiconductor

PDC3906Z Distributor