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PDC39F2BX 30V N-Channel MOSFET

PDC39F2BX Description

30V N-Channel MOSFETs PDC39F2BX General .
These N-Channel enhancement mode power field effect BVDSS RDSON ID transistors are using trench DMOS technology.

PDC39F2BX Features

* 30V,120A, RDS(ON) =2.95mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC39F2BX
Manufacturer
Potens semiconductor
File Size
958.76 KB
Datasheet
PDC39F2BX-Potenssemiconductor.pdf
Description
30V N-Channel MOSFET

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30V N-Channel MOSFET Potens semiconductor
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