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PDC4756T

N+P Dual Channel MOSFETs

PDC4756T Features

* Fast switching

* Green Device Available

* Suit for 4.5V Gate Drive Applications

* 100% EAS Guaranteed Applications

* DC Fan

* Motor Drive Applications

* Networking

* Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS

PDC4756T General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

PDC4756T Datasheet (906.81 KB)

Preview of PDC4756T PDF

Datasheet Details

Part number:

PDC4756T

Manufacturer:

Potens semiconductor

File Size:

906.81 KB

Description:

N+p dual channel mosfets.

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TAGS

PDC4756T N +P Dual Channel MOSFETs Potens semiconductor

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