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PDC4806T Dual N-Channel MOSFETs

PDC4806T Description

40V Dual N-Channel MOSFETs PDC4806T General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDC4806T Features

* 30V,30A, RDS(ON) =9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC4806T
Manufacturer
Potens semiconductor
File Size
444.78 KB
Datasheet
PDC4806T-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFETs

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Dual N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDC4806T-like datasheet