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PDS3810 Dual N-Channel MOSFETs

PDS3810 Description

30V Dual N-Channel MOSFETs PDS3810 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDS3810 Features

* 30V,10A, RDS(ON) =13mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDS3810
Manufacturer
Potens semiconductor
File Size
748.46 KB
Datasheet
PDS3810-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFETs

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Dual N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDS3810-like datasheet