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PDS3812 Dual N-Channel MOSFETs

PDS3812 Description

30V Dual N-Channel MOSFETs PDS3812 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDS3812 Features

* 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDS3812
Manufacturer
Potens semiconductor
File Size
393.09 KB
Datasheet
PDS3812-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFETs

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Dual N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDS3812-like datasheet