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RCR1525SI

P-Channel Enhancement Mode Field Effect Transistor

RCR1525SI Features

* VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state re

RCR1525SI General Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered cir.

RCR1525SI Datasheet (85.96 KB)

Preview of RCR1525SI PDF

Datasheet Details

Part number:

RCR1525SI

Manufacturer:

RCR

File Size:

85.96 KB

Description:

P-channel enhancement mode field effect transistor.

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RCR1525SI P-Channel Enhancement Mode Field Effect Transistor RCR

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