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RCR1526SQ

P-Channel Enhancement Mode Field Effect Transistor

RCR1526SQ Features

* VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON). very small outline surface mount package. z Pin Configuration DDD D z General Description This P-Channel enhancement mode power FETs are produced with high cell density,

RCR1526SQ General Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circ.

RCR1526SQ Datasheet (99.06 KB)

Preview of RCR1526SQ PDF

Datasheet Details

Part number:

RCR1526SQ

Manufacturer:

RCR

File Size:

99.06 KB

Description:

P-channel enhancement mode field effect transistor.

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RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor RCR

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