RCR1540ESJ Datasheet, transistor equivalent, RCR

RCR1540ESJ Features

• Transistor z Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HBM z General D

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RCR1540ESJ

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RCR

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📄 Datasheet

Description:

P-channel enhancement mode field effect transistor. The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

RCR1540ESJ Application

• Applications z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Sy mbol VDS VGS Ratings -20 ±8 Unit V V

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RCR1540ESJ

RCR

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