H5N2519P - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Datasheet Details

Part number	H5N2519P
Manufacturer	Renesas Technology
File Size	125.41 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2519P_RenesasTechnology.pdf

Low on-resistance.
Low leakage current.
High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T.

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Published: Oct 5, 2007 |