H5N2522FP-E0-E Datasheet - Renesas Technology

Datasheet Details

Part number:

H5N2522FP-E0-E

Manufacturer:

Renesas ↗ Technology

File Size:

92.71 KB

Description:

High Speed Power Switching MOS FET

Features

* Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching

* Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to Source voltage G

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H5N2522FP-E0-E, High Speed Power Switching MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

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H5N2522FP-E0-E High Speed Power Switching MOS FET Renesas Technology

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