H5N2522FP-E0-E Datasheet, Fet, Renesas Technology

H5N2522FP-E0-E Features

• Fet
• Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
• Low leakage current
• High speed switching
• Built-in fast recovery diod

PDF File Details

Part number:

H5N2522FP-E0-E

Manufacturer:

Renesas ↗ Technology

File Size:

92.71kb

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📄 Datasheet

Description:

High speed power switching mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

H5N2522FP-E0-E Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

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H5N2522FP-E0-E

Renesas Technology

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