H5N2521FN

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Rochester Electronics LLC	H5N2521FN-E-AR	POWER FIELD-EFFECT TRANSISTOR	DigiKey	0	233 units	$1.29	🛒 Buy Now

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Datasheet Details

Part number:

H5N2521FN

Manufacturer:

Renesas ↗ Technology

File Size:

143.56 KB

Description:

Silicon n channel mos fet high speed power switching.
H5N2521FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1619-0101 Rev.1.01 May 13, 2008.
Features * Low on-resistance * Low leakage current www.DataSheet4U.com * High speed switching Out.

✔ H5N2521FN Features

Low on-resistance
Low leakage current www.DataSheet4U.com
High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2.

✔ H5N2521FN Application

such as the development of weapons of mass destruction or for the purpose of any other military use. When ex

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H5N2521FN Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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