H5N2801P - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

H5N2801P Description

H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 www.DataSheet4U.com .

H5N2801P Features

* Low on-resistance
* Low drive current
* High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain cur

📥 Download Datasheet

H5N2801P Datasheet Preview — Preview of H5N2801P PDF

Datasheet Details

Part number: H5N2801P
Manufacturer: Renesas ↗ Technology
File Size: 142.45 KB
Datasheet: H5N2801P_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

📁 Related Datasheet

H5N2005DL - MOSFET (Renesas)
H5N2005DS - MOSFET (Renesas)
H5N2509P - Silicon N-Channel MOSFET (Hitachi)
H5N2901FL-M0 - MOSFET (Renesas)
H5N3011P - N-Channel MOSFET (INCHANGE)
H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
H5N5005PL - Silicon N-Channel MOSFET (Hitachi)

📌 All Tags

Silicon Channel MOS FET High Speed Power Switching Renesas Technology

Renesas Technology H5N2801P-like datasheet

H5N2802PF - Silicon N Channel MOS FET High Speed Power Switching
H5N2803PF - Silicon N Channel MOS FET High Speed Power Switching
H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching
H5N2001LM - Silicon N Channel MOS FET High Speed Power Switching
H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching
H5N2003P - Silicon N Channel MOS FET High Speed Power Switching