H5N2801P Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 www.DataSheet4U.com .

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Datasheet Specifications

Part number: H5N2801P
Manufacturer: Renesas ↗ Technology
File Size: 142.45 KB
Datasheet: H5N2801P_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance
* Low drive current
* High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain cur

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H5N2801P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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