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H7N0602AB - Silicon N-Channel MOSFET

Renesas Technology

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Datasheet Details

Part number	H7N0602AB
Manufacturer	Renesas Technology
File Size	145.07 KB
Description	Silicon N-Channel MOSFET
Datasheet	H7N0602AB_RenesasTechnology.pdf

H7N0602AB Product details

Features

Low on-resistance RDS(on) = 4.1 mΩ typ.
Low drive current.
Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150.
55 to +150 Unit V.

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Published: Nov 20, 2008 |