Description
H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 .
Features
* Low on-resistance RDS (on) = 4.1 mΩ typ. www. DataSheet4U. com
* 4.5 V gate drive devices
* High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3
RENESAS Package code: PRSS0004AE-B (Pac
Applications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat
