H7N0602LD Silicon N-Channel MOSFET

Renesas Technology

Description

H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 .

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Datasheet Specifications

Part number: H7N0602LD
Manufacturer: Renesas ↗ Technology
File Size: 160.60 KB
Datasheet: H7N0602LD_RenesasTechnology.pdf
Description: Silicon N-Channel MOSFET

Features

* Low on-resistance RDS (on) = 4.1 mΩ typ. www. DataSheet4U. com
* 4.5 V gate drive devices
* High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Pac

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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H7N0602LD Silicon N-Channel MOSFET Renesas Technology

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