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H7N0602LD Silicon N-Channel MOSFET

H7N0602LD Description

H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 .

H7N0602LD Features

* Low on-resistance RDS (on) = 4.1 mΩ typ. www. DataSheet4U. com
* 4.5 V gate drive devices
* High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Pac

H7N0602LD Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOSFET Renesas Technology
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