Datasheet4U Logo Datasheet4U.com

2SD1164-Z SILICON POWER TRANSISTOR

2SD1164-Z Description

Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR .
R07DS0254EJ0400 Rev.

2SD1164-Z Features

* High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2

2SD1164-Z Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

📥 Download Datasheet

Preview of 2SD1164-Z PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SD1160 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SD1162 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
  • 2SD1163 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1163A - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1165A - NPN Transistor (Toshiba)
  • 2SD1166 - NPN Transistor (Toshiba)
  • 2SD1168 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1169 - Si NPN Triple Diffused Plannar Transistor (ETC)

📌 All Tags

SILICON POWER TRANSISTOR Renesas
Renesas 2SD1164-Z-like datasheet