2SK3161 Datasheet, Mosfet, Renesas

2SK3161 Features

  • Mosfet
  • Low on-resistance RDS =90 mΩ typ.
  • High speed switching
  • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A

PDF File Details

Part number:

2SK3161

Manufacturer:

Renesas ↗

File Size:

85.25kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: 2SK3161 📥 Download PDF (85.25kb)
Page 2 of 2SK3161 Page 3 of 2SK3161

TAGS

2SK3161
N-Channel
MOSFET
Renesas

📁 Related Datasheet

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2SK3160 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ ty.

2SK3160 - N-Channel MOSFET (Renesas)
2SK3160 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive dev.

2SK3161 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance .

2SK3161L - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance .

2SK3161L - N-Channel MOSFET (Renesas)
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V .

2SK3161S - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance .

2SK3161S - N-Channel MOSFET (Renesas)
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V .

2SK3162 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS = 60 mΩ ty.

2SK3162 - N-Channel MOSFET (Renesas)
2SK3162 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive dev.

Stock and price

Renesas Electronics Corporation
NCH POWER MOSFET 200V 15A 115MOH
DigiKey
2SK3161STR-E
0 In Stock
Qty : 3000 units
Unit Price : $2.63
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