Part number:
2SK3161S
Manufacturer:
File Size:
85.25 KB
Description:
N-channel mosfet.
* Low on-resistance RDS =90 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0
2SK3161S
85.25 KB
N-channel mosfet.
📁 Related Datasheet
2SK3161 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance .
2SK3161 - N-Channel MOSFET
(Renesas)
2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V .
2SK3161L - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK3161(L), 2SK3161(S)
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ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance .
2SK3161L - N-Channel MOSFET
(Renesas)
2SK3161(L), 2SK3161(S)
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Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V .
2SK3161S - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK3161(L), 2SK3161(S)
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ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance .
2SK316 - N-Channel MOSFET
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.
2SK3160 - Silicon N-Channel MOSFET
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ADE-208-751 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 130 mΩ ty.
2SK3160 - N-Channel MOSFET
(Renesas)
2SK3160
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =130 mΩ typ.
• High speed switching • 4 V gate drive dev.
