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NP80N06DLD, NP80N06CLD N-CHANNEL POWER MOS FET

NP80N06DLD Description

PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIP.
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. Channel Temperature 175 de.

NP80N06DLD Features

* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX. ) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX. ) (VGS = 5 V, ID = 40 A)
* Low Ciss : Ciss = 2360 pF (TYP. )
* Built-in Gate protection diode ORDERING INFORMATION PART NUMBER

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This datasheet PDF includes multiple part numbers: NP80N06DLD, NP80N06CLD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NP80N06DLD, NP80N06CLD
Manufacturer
Renesas ↗
File Size
83.70 KB
Datasheet
NP80N06CLD-Renesas.pdf
Description
N-CHANNEL POWER MOS FET
Note
This datasheet PDF includes multiple part numbers: NP80N06DLD, NP80N06CLD.
Please refer to the document for exact specifications by model.

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N-CHANNEL POWER MOS FET Renesas
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