* Channel Temperature 175 degree rated
* Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
* Low Ciss : Ciss = 2360 pF (TYP.)
* Built-in Gate protection diode ORDERING INFORMATION PART NUMBER
NP80N06ELD Datasheet (83.70 KB)
NP80N06ELD
83.70 KB
N-channel power mos fet.
PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIP.
📁 Related Datasheet
NP80N06CLD N-CHANNEL POWER MOS FET (Renesas)
NP80N06DLD N-CHANNEL POWER MOS FET (Renesas)
NP80N06MLG MOSFET (NEC)
NP80N06NLG MOSFET (NEC)
NP80N06PLG MOSFET (NEC)
NP80N03CDE SWITCHING N-CHANNEL POWER MOSFET (NEC)
NP80N03CLE SWITCHING N-CHANNEL POWER MOS FET (NEC)
NP80N03CLE SWITCHING N-CHANNEL POWER MOSFET (NEC)
NP80N03DDE SWITCHING N-CHANNEL POWER MOSFET (NEC)
NP80N03DLE SWITCHING N-CHANNEL POWER MOS FET (NEC)
