Part number:
2SD1766
Manufacturer:
File Size:
159.26 KB
Description:
Medium power transistor.
* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
* Structure Epitaxial planar type NPN silicon transistor 0.5±0.1
* Dimensions (Unit : mm) 2SD1766 4.5+
* 00..21 1.6±0.1 1.5 +0.2
* 0.1 2SD1758 6.5±0.2 5.1+
* 00.
2SD1766
159.26 KB
Medium power transistor.
📁 Related Datasheet
2SD1760 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple.
2SD1760 - Power Transistor
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FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
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Epitaxial planar type. NPN s.
2SD1760 - Power Transistor
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RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.
2SD1760 - NPN Transistors
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■ Features
● Low VCE (sat) ● Complementary to 2SB1184
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1.
2SD1761 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1761 - Silicon NPN Power Transistors
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to .
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(Rohm)
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FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complem.