RU1H190S Datasheet - Ruichips

RU1H190S N-Channel Advanced Power MOSFET

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current.

RU1H190S Features

* 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applic

RU1H190S-Ruichips.pdf

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Datasheet Details

Part number:

RU1H190S

Manufacturer:

Ruichips

File Size:

405.41 KB

Description:

N-channel advanced power mosfet.

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RU1H190S RU1H190S N-Channel Advanced Power MOSFET Ruichips

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