RU1H190S - N-Channel Advanced Power MOSFET
TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current
RU1H190S Features
* 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Available Applic
