2STW1695 - High Power PNP Epitaxial Planar Bipolar Transistor

ST Microelectronics

Datasheet Details

Part number	2STW1695
Manufacturer	STMicroelectronics ↗
File Size	215.20 KB
Description	High Power PNP Epitaxial Planar Bipolar Transistor
Datasheet	2STW1695_STMicroelectronics.pdf

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive 2 1 3.

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Published: Mar 27, 2007 |