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2STW4468

High Power NPN Epitaxial Planar Bipolar Transistor

2STW4468 Features

* High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247 3 2 1 Applications

* Audio power amplifier Description The device is

2STW4468 General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes .

2STW4468 Datasheet (213.91 KB)

Preview of 2STW4468 PDF

Datasheet Details

Part number:

2STW4468

Manufacturer:

STMicroelectronics ↗

File Size:

213.91 KB

Description:

High power npn epitaxial planar bipolar transistor.

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2STW4468 High Power NPN Epitaxial Planar Bipolar Transistor ST Microelectronics

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