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2STW1693 High power PNP epitaxial planar bipolar transistor

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Description

2STW1693 High power PNP epitaxial planar bipolar transistor .
The device is a PNP transistor manufactured in low voltage planar technology using base island layout.

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Features

* High breakdown voltage VCEO = -80 V
* Complementary to 2STW4466
* Typical ft = 20 MHz

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2STW1693 High power PNP epitaxial planar bipolar transistor STMicroelectronics
STMicroelectronics 2STW1693-like datasheet
2STW4466
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