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2STW1693

High power PNP epitaxial planar bipolar transistor

2STW1693 Features

* High breakdown voltage VCEO = -80 V

* Complementary to 2STW4466

* Typical ft = 20 MHz

* Fully characterized at 125 oC Applications

* Audio power amplifier Description The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resu

2STW1693 General Description

The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. 3 2 1 TO-247 Figure 1. Inte.

2STW1693 Datasheet (134.42 KB)

Preview of 2STW1693 PDF

Datasheet Details

Part number:

2STW1693

Manufacturer:

STMicroelectronics ↗

File Size:

134.42 KB

Description:

High power pnp epitaxial planar bipolar transistor.

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2STW1693 High power PNP epitaxial planar bipolar transistor STMicroelectronics

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