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2STW4466 High power NPN epitaxial planar bipolar transistor

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Description

2STW4466 High power NPN epitaxial planar bipolar transistor .
The device is a NPN transistor manufactured in low voltage planar technology using base island layout.

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Features

* High breakdown voltage VCEO = www. DataSheet4U. com
* Complementary to 2STW1693

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