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2STW4466

High power NPN epitaxial planar bipolar transistor

2STW4466 Features

* High breakdown voltage VCEO = www.DataSheet4U.com

* Complementary to 2STW1693

* 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications

* 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technol

2STW4466 General Description

The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schemat.

2STW4466 Datasheet (197.78 KB)

Preview of 2STW4466 PDF

Datasheet Details

Part number:

2STW4466

Manufacturer:

STMicroelectronics ↗

File Size:

197.78 KB

Description:

High power npn epitaxial planar bipolar transistor.

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2STW4466 High power NPN epitaxial planar bipolar transistor STMicroelectronics

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