Datasheet4U Logo Datasheet4U.com

STB16NK60Z-S, STB16NK60Z Datasheet - ST Microelectronics

STB16NK60Z_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STB16NK60Z-S, STB16NK60Z. Please refer to the document for exact specifications by model.
STB16NK60Z-S Datasheet Preview Page 2 STB16NK60Z-S Datasheet Preview Page 3

Datasheet Details

Part number:

STB16NK60Z-S, STB16NK60Z

Manufacturer:

STMicroelectronics ↗

File Size:

310.94 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: STB16NK60Z-S, STB16NK60Z.
Please refer to the document for exact specifications by model.

STB16NK60Z-S, STB16NK60Z, N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

www.DataSheet4U.com STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω ID 14 A 14 A 14 A Pw 190 W 190 W 190 W 3 1 2 TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 TO-220 I2SPAK

STB16NK60Z-S Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

📁 Related Datasheet

📌 All Tags

ST Microelectronics STB16NK60Z-S-like datasheet