STB16N90K5 Datasheet - STMicroelectronics

STB16N90K5 N-CHANNEL MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

STB16N90K5 Features

* Order code VDS STB16N90K5 900 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected RDS(on) max. 330 mΩ ID 15 A Applications

* Switching applications Desc

STB16N90K5-STMicroelectronics.pdf