STB16NK65Z-S Datasheet (ST Microelectronics)

STB16NK65Z-S, N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

STB16NK65Z-S Features

* TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 Ω < 0.50 Ω TYPICAL RDS(on) = 0.38Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBIL