STB16NM50N Datasheet - STMicroelectronics

STB16NM50N N-channel Power MOSFET

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hi.

STB16NM50N Features

* www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO-247 3 1 2 1. Limited only by maximum temperature

STB16NM50N Datasheet (595.30 KB)