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STB3NC90Z N-CHANNEL Power MOSFET

STB3NC90Z Description

N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET TYPE STB3NC90 s s STB3NC90Z VDSS 900V RDS(on) < 3.5Ω ID 3.5 A s s s TYPI.
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toba.

STB3NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STB3NC90Z Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Cu

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