* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STB3NC90Z Datasheet (338.61 KB)
STB3NC90Z
338.61 KB
N-channel power mosfet.
N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STB3NC90
s s
STB3NC90Z
VDSS 900V
RDS(on) < 3.5Ω
ID 3.5 A
s s s
TYPI.
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