STB3NK60Z Datasheet (ST Microelectronics)

STB3NK60Z, N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.6 < 3.6 < 3.6 < 3.6 < 3.6 Ω Ω Ω Ω Ω ID 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPA

STB3NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta