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STB3NB60 Datasheet - ST Microelectronics

STB3NB60 N-CHANNEL Power MOSFET

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STB3NB60 Datasheet (90.55 KB)

Preview of STB3NB60 PDF

Datasheet Details

Part number:

STB3NB60

Manufacturer:

STMicroelectronics ↗

File Size:

90.55 KB

Description:

N-channel power mosfet.

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STB3NB60 N-CHANNEL Power MOSFET ST Microelectronics

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