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STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT

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Description

www.DataSheet4U.com STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω Preliminary Data General .
The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the.

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Features

* VCS(ON) 1.3 V
* IC 50 A RCS(ON) 0.026 W High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON) 1 2 3 4

STI50DE100 Distributors

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STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT ST Microelectronics
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