STP7NC70Z Datasheet - ST Microelectronics

N-CHANNEL MOSFET

STP7NC70Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP7NC70Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP7NC70Z Datasheet (529.51 KB)

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STP7NC70Z

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STMicroelectronics ↗

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529.51 KB

Description:

N-channel mosfet.
STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC70Z/F.

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STP7NC70Z N-CHANNEL MOSFET ST Microelectronics

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STP7NC70Z Features

STP7NC70Z General Description

Datasheet Details

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