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STS1HNC60 N-CHANNEL PowerMESH MOSFET

STS1HNC60 Description

N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET PRELIMINARY DATA TYPE STS1HNC60 s s s s s STS1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.36 A TYPICAL .
Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performanc.

STS1HNC60 Applications

* s SWITCH MODE LOW POWER SUPPIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C

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N-CHANNEL PowerMESH MOSFET ST Microelectronics
ST Microelectronics STS1HNC60-like datasheet