STS1HNC60

N-CHANNEL PowerMESH MOSFET

ST Microelectronics

STS1HNC60 General Description

Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptio.

STS1HNC60 Datasheet (137.10 KB)

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STS1HNC60

Manufacturer:

STMicroelectronics ↗

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137.10 KB

Description:

N-channel powermesh mosfet.
N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET PRELIMINARY DATA TYPE STS1HNC60 s s s s s STS1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.36 A TYPICAL .

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STS1HNC60 N-CHANNEL PowerMESH MOSFET ST Microelectronics

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STS1HNC60 General Description

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