* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 1.4A R DS(ON) (m Ω) Max 312 @ VGS=10V S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Vo
STS126
SamHop Microelectronics
90.64 KB
N-channel mosfet.
Gre r Pro
STS126
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V.
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