STW29NK50Z

N-CHANNEL SuperMESH MOSFET

ST Microelectronics

STW29NK50Z Features

* TYPE STW29NK50Z I I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.105 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 DESCRIPTION The Su

STW29NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established Figure 2: Internal Schematic Diagram strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dtDataSheet4U.com capability for the .

STW29NK50Z Datasheet (559.37 KB)