STW29NK50ZD

N-Channel MOSFET

ST Microelectronics

STW29NK50ZD Features

* Figure 1: Package TYPE VDSS RDS(on) ID PW STW29NK50ZD 500 V < 0.13 Ω 29 A 350 W

* TYPICAL RDS(on) = 0.095 Ω )

* HIGH dv/dt CAPABILITY t(s

* 100% AVALANCHE TESTED c

* GATE CHARGE MINIMIZED u

* LOW INTRINSIC CAPACITANCES d

* VERY GOOD MANUFACTURING ro ) REPEATIBILITY P t

STW29NK50ZD General Description

b P The Fast SuperMesh™ series associates all ad- vantages of reduced on-resistance, zener gate - O te protection and very goog dv/dt capability with a ) le Fast body-drain recovery diode. Such series comt(s o plements the “FDmesh™” Advanced Technology. Figure 2: Internal Schematic Diagram uc Obs .

STW29NK50ZD Datasheet (273.66 KB)