STW38NB20 Datasheet (ST Microelectronics)

STW38NB20, N-Channel Power MOSFET

te Using the latest high voltage MESH OVERLAY™ le process, STMicroelectronics has designed an ado vanced family of power MOSFETs with outstands ing performances.

The new patent pending strip b layout coupled with the Company’s proprietary O edge termination structure, gives the lowest - RDS(on) per

STW38NB20 Features

* Type VDSS RDS(on) STW38NB20 200 V < 0.065 Ω ID 38 A Figure 1. Package FEATURES SUMMARY

* TYPICAL RDS(on) = 0.052 Ω

* EXTREMELY HIGH dv/dt CAPABILITY

* ± 30V GATE TO SOURCE VOLTAGE RATING t(s)

* 100% AVALANCHE TESTED c

* LOW INTRINSIC CAPACITANCE u

* GATE CHARGE MINI