STW38NB20 N-Channel Power MOSFET

ST Microelectronics

Description

STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH™ MOSFET PRELIMINARY DATA Table 1.General .
te Using the latest high voltage MESH OVERLAY™ le process, STMicroelectronics has designed an ado vanced family of power MOSFETs with outstands ing pe.

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Datasheet Specifications

Part number: STW38NB20
Manufacturer: STMicroelectronics ↗
File Size: 88.25 KB
Datasheet: STW38NB20_STMicroelectronics.pdf
Description: N-Channel Power MOSFET

Features

* Type VDSS RDS(on) STW38NB20 200 V < 0.065 Ω ID 38 A Figure 1. Package FEATURES SUMMARY
* TYPICAL RDS(on) = 0.052 Ω
* EXTREMELY HIGH dv/dt CAPABILITY
* ± 30V GATE TO SOURCE VOLTAGE RATING t(s)
* 100% AVALANCHE TESTED c
* LOW INTRINSIC CAPACITANCE u
* GATE CHARGE MINI

Applications

* rod
* HIGH CURRENT, HIGH SPEED SWITCHING
* SWITCH MODE POWER SUPPLY (SMPS) te P
* DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE Obsole POWER SUPPLY AND MOTOR DRIVE Table 2. Order Codes Part Number STW38NB20 Marking W38NB20 Package TO-247 Packaging TUBE April 2004 REV. 2

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STW38NB20 N-Channel Power MOSFET ST Microelectronics

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