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STW34NB20

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

STW34NB20 Features

* Type STW34NB20 VDSS 200 V RDS(on) < 0.075 Ω ID 34 A STW34NB20 Figure 1. Package FEATURES SUMMARY

* TYPICAL RDS(on) = 0.062 Ω

* EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 1 3 2 DESCRIPTION Using the

STW34NB20 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STW34NB20 Datasheet (258.52 KB)

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Datasheet Details

Part number:

STW34NB20

Manufacturer:

STMicroelectronics ↗

File Size:

258.52 KB

Description:

N-channel enhancement mode power mosfet.

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STW34NB20 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ST Microelectronics

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