STW7NC80Z Datasheet - ST Microelectronics

N-CHANNEL MOSFET

STW7NC80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STW7NC80Z General Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STW7NC80Z Datasheet (248.75 KB)

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Part number:

STW7NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

248.75 KB

Description:

N-channel mosfet.
N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW7NC80Z s s s s s s STW7NC80Z VDSS 800 V RDS(on) < 1.8Ω ID 6A TYPIC.

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STW7NC80Z N-CHANNEL MOSFET ST Microelectronics

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STW7NC80Z Features

STW7NC80Z General Description

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