* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STW9NC70Z Datasheet (201.40 KB)
STW9NC70Z
201.40 KB
N-channel mosfet.
N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW9NC70Z s s STW9NC70Z VDSS 700 V RDS(on) < 1.2 Ω ID 7.5A s s s .
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