STW9NC80Z N-Channel MOSFET

ST Microelectronics

Description

N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW9NC80Z n n n n n n STW9NC80Z VDSS 800 V RDS(on) <0.9Ω ID 9.4 A .
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

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Datasheet Specifications

Part number: STW9NC80Z
Manufacturer: STMicroelectronics ↗
File Size: 248.02 KB
Datasheet: STW9NC80Z_STMicroelectronics.pdf
Description: N-Channel MOSFET

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener v

Applications

* APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Dr

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STW9NC80Z N-Channel MOSFET ST Microelectronics

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