* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener v
STW9NC80Z Datasheet (248.02 KB)
STW9NC80Z
248.02 KB
N-channel mosfet.
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW9NC80Z n n n n n n STW9NC80Z VDSS 800 V RDS(on) <0.9Ω ID 9.4 A .
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