STW9NC80Z Datasheet - ST Microelectronics

STW9NC80Z N-Channel MOSFET

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STW9NC80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener v

STW9NC80Z Datasheet (248.02 KB)

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Datasheet Details

Part number:

STW9NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

248.02 KB

Description:

N-channel mosfet.

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STW9NC80Z N-Channel MOSFET ST Microelectronics

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