RF2L42008CG2 Datasheet (STMicroelectronics)

RF2L42008CG2, RF power LDMOS transistor

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Product status link RF2L42008CG2 Pr

RF2L42008CG2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched for ease of use

* Large positive and negative gate-source voltage range fo