RF2L42008CG2

RF power LDMOS transistor

STMicroelectronics

RF2L42008CG2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%

* High efficiency and linear gain operations

* Integrated ESD protection

* Internally matched for ease of use

* Large positive and negative gate-source voltage range fo

RF2L42008CG2 General Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF2L42008CG2 Pr.

RF2L42008CG2 Datasheet (1.53 MB)

RF2L42008CG2 Datasheet Preview — Preview of RF2L42008CG2 PDF

Datasheet Details

Part number:

RF2L42008CG2

Manufacturer:

STMicroelectronics ↗

File Size:

1.53 MB

Description:

Rf power ldmos transistor.
RF2L42008CG2 Datasheet 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom sid.

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RF2L42008CG2 power LDMOS transistor STMicroelectronics

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RF2L42008CG2 Features

RF2L42008CG2 General Description

Datasheet Details

File Size:

Description:

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