RF2L42008CG2 Datasheet, Transistor, STMicroelectronics

RF2L42008CG2 Features

• Transistor Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%
• High efficiency and linear gain operations
• Integrated ESD protect

PDF File Details

Part number:

RF2L42008CG2

Manufacturer:

STMicroelectronics ↗

File Size:

1.53MB

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📄 Datasheet

Description:

Rf power ldmos transistor. The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and IS

RF2L42008CG2 Application

• Applications
• Telecom and wideband communications
• Avionics and radar
• 2.45 GHz industrial Description The RF2L42008CG2

TAGS

RF2L42008CG2

STMicroelectronics

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