RF2L42008CG2 - RF power LDMOS transistor

STMicroelectronics

RF2L42008CG2 Datasheet Preview — Preview of RF2L42008CG2 PDF

Datasheet Details

Part number	RF2L42008CG2
Manufacturer	STMicroelectronics ↗
File Size	1.53 MB
Description	RF power LDMOS transistor
Datasheet	RF2L42008CG2-STMicroelectronics.pdf

RF2L42008CG2 Product details

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European directive 2002/95/EC.

📁 RF2L42008CG2 Similar Datasheet

RF2L6S - Super Fast Recovery Diode (Rohm)
RF2001 - SAW Filter (REYCONNS)
RF2001NS2D - Super Fast Recovery Diode (ROHM)
RF2001NS2DFH - Super Fast Recovery Diode (ROHM)
RF2001NS3D - Fast Recovery Diodes (Rohm)
RF2001NS3DFH - Super Fast Recovery Diode (ROHM)
RF2001T2D - Fast Recovery Diode (Rohm)
RF2001T2DFH - Fast Recovery Diode (ROHM)

Other Datasheets by STMicroelectronics

RF2L15200CB4 - RF power LDMOS transistor
RF2L16080CF2 - RF power LDMOS transistor
RF2L16180CB4 - RF power LDMOS transistor
RF2L16180CF2 - RF power LDMOS transistor
RF2L24280CB4 - RF Power LDMOS transistor
RF2L27015CG2 - RF power LDMOS transistor

Published: Mar 14, 2023 |